Memory device and method for its operation

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United States of America Patent

PATENT NO 11756609
SERIAL NO

17293693

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Abstract

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The invention describes a memory device which combines a switchable resistive element and a superconductor element electrically in parallel. The switchable resistive element comprises an active material, which is switchable between first and second values of electrical resistivity ρ1 and ρ2 at the same temperature, wherein ρ1 is different to ρ2. The superconductor element is operable so that at least part of the superconductor element is switchable from a superconducting state to a non-superconducting state. When the superconductor element is switched from the superconducting state to the non-superconducting state, a current injection is provided through the switchable resistive element capable of switching the switchable resistive element between said first and second values of electrical resistivity.

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Patent Owner(s)

Patent OwnerAddress
JOZEF STEFAN INSTITUTEJAMOVA CESTA 39 LJUBLJANA SI-1000

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Mihailovic, Dragan Ljubljana, SI 3 22
Mraz, Anze Ljubljana, SI 1 0
Svetin, Damjan Ljubljana, SI 1 0
Venturini, Rok Ljubljana, SI 1 0

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