Hetergenous integration and electro-optic modulation of III-nitride photonics on a silicon photonic platform

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United States of America Patent

PATENT NO 11754865
APP PUB NO 20210157178A1
SERIAL NO

16953574

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Abstract

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A photonic integrated circuit comprises a silicon nitride waveguide, an electro-optic modulator formed of a III-nitride waveguide structure disposed on the silicon nitride waveguide, a dielectric cladding covering the silicon nitride waveguide and electro-optic modulator, and electrical contacts disposed on the dielectric cladding and arranged to apply an electric field to the electro-optic modulator.

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Patent OwnerAddress
RTX BBN TECHNOLOGIES INC10 MOULTON STREET CAMBRIDGE MA 02138

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Kazior, Thomas Sudbury, US 8 14
Soltani, Moe Belmont, US 6 0

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