Method of manufacturing extreme ultraviolet mask with reduced wafer neighboring effect

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United States of America Patent

PATENT NO 11740547
APP PUB NO 20210247687A1
SERIAL NO

17244662

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Abstract

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A method for manufacturing a reticle is provided. The method includes forming a first reflective multilayer over a mask substrate. The method also includes forming a capping layer over the first reflective ML. The method further includes depositing a first absorption layer over the capping layer. In addition, the method includes depositing an etch stop layer over the first absorption layer. The method also includes forming a second reflective multilayer (ML) over the etch stop layer. The method further includes forming a second absorption layer over the second reflective ML. In addition, the method includes forming an opening through the second absorption layer and the second reflective ML until the etch stop layer is exposed. The method also includes etching the etch stop layer and the first absorption layer through the opening until the capping layer is exposed.

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Patent Owner(s)

Patent OwnerAddress
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD8 LI-HSIN RD 6 HSINCHU SCIENCE PARK HSINCHU 300-78

International Classification(s)

Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Chen, Chia-Jen Jhudong Township, Hsinchu County, TW 98 1413
Hsueh, Wen-Chang Taoyuan, TW 12 20
Lee, Hsin-Chang Zhubei, TW 203 1090
Lee, Huan-Ling Hsinchu County, TW 21 10

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