Semiconductor device
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United States of America Patent
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Aug 22, 2023
Grant Date -
N/A
app pub date -
Sep 29, 2021
filing date -
Aug 20, 2019
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Abstract
A semiconductor device including: a substrate that includes a first active region and a second active region; a first source/drain pattern on the first active region; a second source/drain pattern on the second active region; a separation dielectric pattern on the substrate between the first source/drain pattern and the second source/drain pattern; and a first contact pattern on the first source/drain pattern, wherein the first contact pattern includes: a first metal pattern; a first barrier pattern between the first metal pattern and the first source/drain pattern; and a second barrier pattern between the first barrier pattern and the first source/drain pattern, wherein the first barrier pattern contacts the separation dielectric pattern and extends along a sidewall of the first metal pattern adjacent to the separation dielectric pattern.
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