Reflection mode photomask and method of making

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United States of America Patent

PATENT NO 11735421
SERIAL NO

17667446

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Importance

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Abstract

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A method of manufacturing a reticle includes depositing an etch stop layer over a substrate; and depositing an absorber layer over the etch stop layer. The method further includes depositing a hard mask layer over the absorber layer, wherein the hard mask layer includes tantalum. The method includes patterning the hard mask layer. The method further includes performing a first etch process to remove a portion of the absorber layer underneath the patterned hard mask. The method includes performing a second etch process to partially remove a portion of a thickness of an etch stop layer underneath the removed portion of the absorber layer, wherein performing the third etch process comprises maintaining a remaining thickness of the etch stop layer underneath the removed portion of the absorber. The method further includes maintaining the remaining thickness of the etch stop layer through a termination of the method of manufacturing the reticle.

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Patent Owner(s)

Patent OwnerAddress
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD8 LI-HSIN RD 6 HSINCHU SCIENCE PARK HSINCHU 300-78

International Classification(s)

Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Chen, Chun-Lang Hsinchu, TW 55 312
Tu, Chih-Chiang Hsinchu, TW 85 480

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