Semiconductor device including a Fin-FET and method of manufacturing the same

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United States of America Patent

PATENT NO 11728414
SERIAL NO

17671405

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Abstract

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A method of forming a semiconductor device comprises forming a fin structure; forming a source/drain structure in the fin structure; and forming a gate electrode over the fin structure. The source/drain structure includes Si1−x−yM1xM2y, where M1 includes Sn, M2 is one or more of P and As, 0.01≤x≤0.1, and 0.01≤y≤0.

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Patent Owner(s)

Patent OwnerAddress
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTDNO 8 LI-HSIN ROAD 6 HSINCHU SCIENCE PARK HSINCHU 300

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Chang, I-Ming Hsinchu, TW 45 71
Fang, Ziwei Hsinchu, TW 191 2939
Hsiao, Meng-Hsuan Hsinchu, TW 46 151
Lin, Yu-Ming Hsinchu, TW 635 2287
Mineji, Akira Hsinchu, TW 34 291
Okuno, Yasutoshi Hsinchu, TW 142 941
Peng, Cheng-Yi Taipei, TW 114 2120

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