Forming semiconductor structures with semimetal features
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United States of America Patent
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Aug 1, 2023
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N/A
app pub date -
Nov 13, 2019
filing date -
Mar 15, 2018
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Abstract
The current disclosure describes semiconductor devices, e.g., transistors including a thin semimetal layer as a channel region over a substrate, which includes bandgap opening and exhibits semiconductor properties. Described semiconductor devices include source/drain regions that include a thicker semimetal layer over the thin semimetal layer serving as the channel region, this thicker semimetal layer exhibiting metal properties. The semimetal used for the source/drain regions include a same or similar semimetal material as the semimetal of the channel region.
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