Si-containing film forming precursors and methods of using the same

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United States of America Patent

PATENT NO 11699584
APP PUB NO 20210225635A1
SERIAL NO

17197895

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Abstract

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Methods are disclosed for forming a Silicon Metal Oxide film using a mono-substituted TSA precursor. The precursors have the formula: (SiH3)2N—SiH2-X, wherein X is selected from a halogen atom; an isocyanato group; an amino group; an N-containing C4-C10 saturated or unsaturated heterocycle; or an alkoxy group.

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Patent Owner(s)

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L'AIR LIQUIDE SOCIÉTÉ ANONYME POUR L'EDUTE ED L'EXPLOITATION DES PROCÉDÉS GEORGES CLAUDEPARIS

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Girard, Jean-Marc Versailles, FR 121 3273
Itov, Gennadiy Flemington, US 28 1456
Khandelwal, Manish Somerset, US 36 1503
Pesaresi, Reno Easton, US 12 1435
Sanchez, Antonio Tsukuba, JP 46 1862
Zhang, Peng Montvale, US 846 8792

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