Contact for a semiconductor light emitting device
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United States of America Patent
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Jul 4, 2023
Grant Date -
Aug 9, 2012
app pub date -
Apr 17, 2012
filing date -
Jun 25, 2009
priority date (Note) -
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Abstract
Embodiments of the invention include a semiconductor structure comprising a III-nitride light emitting layer disposed between an n-type region and a p-type region. A contact disposed on the p-type region includes a transparent conductive material in direct contact with the p-type region, a reflective metal layer, and a transparent insulating material disposed between the transparent conductive layer and the reflective metal layer. In a plurality of openings in the transparent insulating material, the transparent conductive material is in direct contact with the reflective metal layer.
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