Method for forming a shallow trench isolation structure with reduced encroachment of active regions and a semiconductor structure therefrom
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United States of America Patent
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Jun 27, 2023
Grant Date -
Mar 2, 2023
app pub date -
Aug 25, 2021
filing date -
Aug 25, 2021
priority date (Note) -
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Abstract
A method for forming a shallow trench isolation (STI) structure using two individual STI trench etching processes is provided. A first STI etching process forms first trenches with one or more sizes in rows along a first dimension in a silicon substrate. A first dielectric is filled in the first trenches following a first thermal oxidation forming a first liner oxide surrounding the first trenches. A second STI trench etching process forms second trenches with one or more sizes in a second dimension to define active regions separated from each other by the first trenches filled with the first dielectric material and second trenches. A second dielectric is filled in the second trenches following a second thermal oxidation forming a second liner oxide surrounding the second trenches. Active region encroachment caused by the first and second thermal oxidation is reduced by doing the two individual STI trench etching processes.
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