Method of fabricating semiconductor device

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United States of America Patent

PATENT NO 11683930
APP PUB NO 20210375882A1
SERIAL NO

17403158

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Abstract

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The present disclosure provides a method of fabricating a semiconductor device. The method includes: providing a semiconductor substrate comprising a memory region and a logic region; forming a memory gate in or on the memory region; forming a plurality of first poly-silicon gates on the memory region and surrounding the memory gate; and forming a plurality of second poly-silicon gates on the logic region simultaneously with the formation of the first poly-silicon gates.

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Patent Owner(s)

Patent OwnerAddress
NANYA TECHNOLOGY CORPORATIONNO 98 NANLIN RD TAISHAN DIST NEW TAIPEI CITY 243

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Chuang, Da-Zen Taipei, TW 13 56
Hsieh, Pin-Hsiu Taoyuan, TW 2 3
Sun, Chih-Chung Zhubei, TW 11 22

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