Switching transistor and semiconductor module to suppress signal distortion
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United States of America Patent
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Jun 20, 2023
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N/A
app pub date -
Mar 20, 2019
filing date -
Apr 27, 2018
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[Overview] [Problem to be Solved] To provide a switching transistor and a semiconductor module having lower distortion generated in a signal. [Solution] A switching transistor including: a channel layer including a compound semiconductor and having sheet electron density equal to or higher than 1.7×1013 cm−2; a barrier layer formed on the channel layer by using a compound semiconductor that is of a different type from the channel layer; a gate electrode provided on the barrier layer; and a source electrode and a drain electrode provided on the barrier layer with the gate electrode interposed between the source electrode and the drain electrode.
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