Semiconductor structure with ultra thick metal and manufacturing method thereof

Number of patents in Portfolio can not be more than 2000

United States of America Patent

PATENT NO 11670584
APP PUB NO 20210366828A1
SERIAL NO

17444334

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Abstract

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The present disclosure provides a method for manufacturing a semiconductor structure, including patterning a photo-sensitive polymer layer with a plurality of trenches by a first mask, the first mask having a first line pitch, patterning a photoresist positioning on a mesa between adjacent trenches by a second mask, the second mask having a second line pitch, the first mask and the second mask having substantially identical pattern topography, and the second line pitch being greater than the first line pitch, and selectively plating conductive material in the plurality of trenches.

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Patent Owner(s)

Patent OwnerAddress
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTDHSINCHU

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Chang, Chung-Long Hsinchu, TW 62 1057
Hsu, Ching-Chung Taichung, TW 17 106
Lu, Chen-Fa Kaohsiung, TW 23 230
Tsai, Cheng-Yuan Hsin-Chu County, TW 289 2706

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