Three-dimensional memory device and manufacturing method thereof
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United States of America Patent
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May 30, 2023
Grant Date -
Nov 18, 2021
app pub date -
Jul 28, 2021
filing date -
Sep 26, 2019
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Abstract
A three-dimensional (3D) memory device includes a substrate, an alternating conductive/dielectric stack disposed on the substrate, an epitaxial layer disposed on the substrate, a blocking layer disposed on the epitaxial layer and surrounded by the alternating conductive/dielectric stack, a trapping layer disposed on and surrounded by the blocking layer, a tunneling layer disposed on and surrounded by the trapping layer, and a semiconductor layer disposed on and in contact with the epitaxial layer and partially disposed on and surrounded by the tunneling layer.
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