Plasma processing method

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United States of America Patent

PATENT NO 11658040
APP PUB NO 20200411327A1
SERIAL NO

16957878

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Abstract

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The invention provides a plasma processing method in which plasma etching is performed on a film to be etched by using a mask, the plasma processing method including: a deposition step of depositing a deposition film containing a boron element on the mask while a radio frequency power is supplied to a sample table on which a sample formed with the film to be etched is placed; and an etching step of etching the film to be etched by using plasma after the deposition step.

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Patent Owner(s)

Patent OwnerAddress
HITACHI HIGH-TECH CORPORATION17-1 TORANOMON 1-CHOME MINATO-KU TOKYO

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Kuwahara, Kenichi Tokyo, JP 21 84
Taniyama, Masaaki Tokyo, JP 2 0
Une, Satoshi Tokyo, JP 13 5

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