Mask blank, transfer mask, and method of manufacturing semiconductor device

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United States of America Patent

PATENT NO 11624979
SERIAL NO

17698151

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Abstract

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Provided is a mask blank in which a light shielding film which is a single layer film formed of a silicon nitride-based material has high light shielding performance against ArF exposure light and is capable of reducing EMF bias of a pattern of the light shielding film. The mask blank includes the light shielding film on a transparent substrate. The light shielding film has an optical density of 3.0 or greater to ArF exposure light. A refractive index n and an extinction coefficient k of the light shielding film to ArF exposure light simultaneously satisfy relationships defined by Formulas (1) and (2) below.

description='In-line Formulae' end='lead'n≤0.0733×k2+0.4069×k+1.0083   Formula (1)description='In-line Formulae' end='tail'

description='In-line Formulae' end='lead'n≥29.316×k2−92.292×k+72.671   Formula (2)description='In-line Formulae' end='tail'

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Patent Owner(s)

Patent OwnerAddress
HOYA CORPORATIONTOKYO

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Shishido, Hiroaki Tokyo, JP 102 766
Taniguchi, Kazutake Tokyo, JP 9 10

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