Method of forming a thermal shield in a monolithic 3-d integrated circuit

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United States of America Patent

PATENT NO 11605574
APP PUB NO 20210183729A1
SERIAL NO

17189777

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Abstract

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A monolithic three-dimensional integrated circuit including a first device, a second device on the first device, and a thermal shield stack between the first device and the second device. The thermal shield stack includes a thermal retarder portion having a low thermal conductivity in a vertical direction, and a thermal spreader portion having a high thermal conductivity in a horizontal direction. The thermal shield stack of the monolithic three-dimensional integrated circuit includes only dielectric materials.

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Patent Owner(s)

Patent OwnerAddress
SAMSUNG ELECTRONICS CO LTDSUWON-SI 16677

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Gerousis, Vassilios Georgetown, US 21 477
Rodder, Mark S Dallas, US 160 3160
Wang, Wei-E Austin, US 34 438

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