Vapor phase epitaxial growth device

Number of patents in Portfolio can not be more than 2000

United States of America Patent

PATENT NO 11591717
APP PUB NO 20200270767A1
SERIAL NO

16649371

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Abstract

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A vapor phase epitaxial growth device comprises a reactor vessel and a wafer holder arranged within the reactor vessel. The wafer holder includes a wafer holding surface configured to hold a wafer with a wafer surface oriented substantially vertically downward. The device comprises a first material gas supply pipe configured to supply a first material gas and arranged below the wafer holding surface. The device comprises a second material gas supply pipe configured to supply a second material gas and arranged below the wafer holding surface. The device comprises a gas exhaust pipe configured to exhaust gases and arranged below the wafer holding surface. A distance between the gas exhaust pipe and an axis line passing through a center of the wafer holding surface is greater than distances between the axis line and each of the first material gas supply pipe and the second material gas supply pipe.

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Patent Owner(s)

Patent OwnerAddress
TOYODA GOSEI CO LTD1 HARUHINAGAHATA KIYOSU-SHI AICHI-KEN 452-8564
NATIONAL UNIVERSITY CORPORATION NAGOYA UNIVERSITY1 FURO-CHO CHIKUSA-KU NAGOYA-SHI AICHI 464-8601

International Classification(s)

Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Amano, Hiroshi Nagoya, JP 192 2984
Fujimoto, Naoki Nagoya, JP 75 263
Honda, Yoshio Nagoya, JP 29 410
Nagamatsu, Kentaro Nagoya, JP 3 1
Nitta, Shugo Nagoya, JP 7 44

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