GaN single crystal and method for manufacturing GaN single crystal
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United States of America Patent
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Feb 28, 2023
Grant Date -
Jul 29, 2021
app pub date -
Apr 6, 2021
filing date -
Feb 6, 2015
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Abstract
A GaN single crystal having a gallium polar surface which is a main surface on one side and a nitrogen polar surface which is a main surface on the opposite side, wherein on the gallium polar surface is found at least one square area, an outer periphery of which is constituted by four sides of 2 mm or more in length, and, when the at least one square area is divided into a plurality of sub-areas each of which is a 100 μm×100 μm square, pit-free areas account for 80% or more of the plurality of sub-areas.
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