Substrate processing method and substrate processing device

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United States of America Patent

PATENT NO 11569085
APP PUB NO 20200273696A1
SERIAL NO

16646334

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Abstract

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The natural oxidation film of polysilicon, which is exposed at a side surface of a recess portion 83 provided in a substrate W, is removed and a thin film 84 of polysilicon is exposed at the side surface of the recess portion 83. Liquid IPA is brought into contact with the thin film 84 of polysilicon after the natural oxidation film of polysilicon is removed. Diluted ammonia water is supplied to the substrate W and the thin film 84 of polysilicon is etched after IPA comes into contact with the thin film 84 of polysilicon.

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Patent Owner(s)

Patent OwnerAddress
SCREEN HOLDINGS CO LTDKYOTO-SHI KYOTO 602-8585

International Classification(s)

Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Fujii, Sadamu Kyoto, JP 8 8
Hinode, Taiki Kyoto, JP 23 120

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