Photonuclear transmutation doping in gallium-based semiconductor materials
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United States of America Patent
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Jan 10, 2023
Grant Date -
Dec 24, 2020
app pub date -
Jun 18, 2020
filing date -
Jun 18, 2019
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Abstract
The present invention relates to various high quality n-type and p-type doped gallium-based semiconductor materials, electronic components incorporating these materials, and processes of producing these materials. In particular, The present invention relates processes to achieve high quality, uniform doping of a whole wafer or a thin layer of gallium-based semiconductor materials for various applications such as a vertical power transistor or diode.
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