Compound semiconductor, method for manufacturing same, and nitride semiconductor

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United States of America Patent

PATENT NO 11549172
APP PUB NO 20210047720A1
SERIAL NO

17086753

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Abstract

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A compound semiconductor has a high electron concentration of 5×1019 cm−3 or higher, exhibits an electron mobility of 46 cm2/V·s or higher, and exhibits a low electric resistance, and thus is usable to produce a high performance semiconductor device. The present invention provides a group 13 nitride semiconductor of n-type conductivity that may be formed as a film on a substrate having a large area size at a temperature of room temperature to 700° C.

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Patent Owner(s)

  • JAPAN SCIENCE AND TECHNOLOGY AGENCY

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Fujioka, Hiroshi Tokyo, JP 58 679
Ueno, Kohei Tokyo, JP 51 89

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