Semiconductor device and method for fabricating the same

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United States of America Patent

PATENT NO 11545560
APP PUB NO 20210151580A1
SERIAL NO

17160421

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Abstract

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A method for fabricating semiconductor device includes the steps of: forming a gate structure on a substrate; forming a first spacer and a second spacer around the gate structure; forming a recess adjacent to two sides of the second spacer; performing a cleaning process to trim the second spacer for forming a void between the first spacer and the substrate; and forming an epitaxial layer in the recess.

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Patent Owner(s)

Patent OwnerAddress
UNITED MICROELECTRONICS CORPNO 3 LI-HSIN RD II HSINCHU SCIENCE PARK HSINCHU 30078

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Chen, Chao-Nan Tainan, TW 19 82
Chen, Chun-Jen Tainan, TW 140 458
Chen, Kuang-Hsiu Tainan, TW 31 44
Cheng, Yu-Lin Changhua County, TW 9 38
Chuang, Wei-Chih Tainan, TW 6 18
Huang, Chung-Ting Kaohsiung, TW 16 18
Huang, Jhong-Yi Nantou County, TW 7 8
Jiang, Bing-Yang Tainan, TW 4 6
Lin, Yu-Shu Tainan, TW 53 239
Liu, Chia-Jong Ping-Tung County, TW 26 170
Tang, Chi-Hsuan Kaohsiung, TW 13 16
Wang, Kai-Hsiang Taichung, TW 7 7
Wu, Guan-Ying Kaohsiung, TW 5 8

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