Superjunction device with oxygen inserted Si-layers

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United States of America Patent

PATENT NO 11545545
APP PUB NO 20200350401A1
SERIAL NO

16930500

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Abstract

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A semiconductor device includes a source region and a drain region of a first conductivity type, a body region of a second conductivity type between the source region and the drain region, a gate configured to control current through a channel of the body region, a drift zone of the first conductivity type between the body region and the drain region, a superjunction structure formed by a plurality of regions of the second conductivity type laterally spaced apart from one another by intervening regions of the drift zone, and a diffusion barrier structure disposed along sidewalls of the regions of the second conductivity type of the superjunction structure. The diffusion barrier structure includes alternating layers of Si and oxygen-doped Si and a Si capping layer on the alternating layers of Si and oxygen-doped Si.

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Patent Owner(s)

  • INFINEON TECHNOLOGIES AUSTRIA AG

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Haase, Robert San Pedro, US 42 309
Huang, Xiaoqiu Plano, US 7 77
Joshi, Ravi Keshav Klagenfurt, AT 42 74
Leomant, Sylvain Poertschach am Woerthersee, AT 23 109
Ma, Ling Redondo Beach, US 99 341
Meiser, Andreas Sauerlach, DE 155 859
Poelzl, Martin Ossiach, AT 100 819
Roesch, Maximilian St. Magdalen, AT 36 186

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