RF switch having independently generated gate and body voltages
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United States of America Patent
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Dec 27, 2022
Grant Date -
Nov 5, 2020
app pub date -
Jul 22, 2020
filing date -
Mar 6, 2015
priority date (Note) -
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Abstract
In some method and apparatus embodiments, an RF circuit comprises a switch transistor having a source, a drain, a gate, and a body. A gate control voltage is applied to the gate of the switch transistor. A body control voltage is applied to the body of the switch transistor. The body control voltage is a positive bias voltage when the switch transistor is in an on state. In some embodiments, an RF circuit comprises a control voltage applied to the gate of the switch transistor through a first resistance and applied to the body of the switch transistor through a second resistance. The first resistance is different from the second resistance.
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