Method for depositing an epitaxial layer on a front side of a semiconductor wafer and device for carrying out the method
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United States of America Patent
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Dec 27, 2022
Grant Date -
Sep 17, 2020
app pub date -
Nov 28, 2018
filing date -
Dec 8, 2017
priority date (Note) -
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Abstract
A method deposits an epitaxial layer on a front side of a semiconductor wafer having monocrystalline material. The method includes: providing the semiconductor wafer; arranging the semiconductor wafer on a susceptor; heating the semiconductor wafer to a deposition temperature using thermal radiation directed to the front side and to the rear side of the semiconductor wafer; conducting a deposition gas over the front side of the semiconductor wafer; and selectively reducing an intensity of a portion of the thermal radiation that is directed to the rear side of the semiconductor wafer, as a result of which first partial regions at an edge of the semiconductor wafer, in the first partial regions a growth rate of the epitaxial layer is greater than in adjacent second partial regions given uniform temperature of the semiconductor wafer owing to an orientation of the monocrystalline material, are heated more weakly.
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