Ion beam lithography method based on ion beam lithography system

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United States of America Patent

PATENT NO 11538653
APP PUB NO 20210183616A1
SERIAL NO

16882978

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The present invention discloses an ion beam lithography method based on an ion beam lithography system. The ion beam lithography system includes a roll-roll printer placed in a vacuum, and a medium-high-energy wide-range ion source, a medium-low-energy wide-range ion source and a low-energy ion source installed on the roll-roll printer. The ion beam lithography method includes: first coating a polyimide (PI) substrate with a dry film, etching the dry film according to a preset circuit pattern, then using the ion beam lithography system to deposit a wide-energy-range metal ion on the circuit pattern to form a film substrate, and finally stripping the dry film off the film substrate to obtain a printed circuit board (PCB).

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Patent Owner(s)

Patent OwnerAddress
BEIJING NORMAL UNIVERSITY100875 19 XINJIE STREET HAIDIAN DISTRICT BEIJING BEIJING CITY BEIJING CITY 100875

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Chen, Lin Beijing, CN 717 4332
Liao, Bin Beijing, CN 20 181
Luo, Jun Beijing, CN 335 1637
Ouyang, Xiaoping Beijing, CN 11 7
Pang, Pan Beijing, CN 4 0
Wu, Xianying Beijing, CN 6 2
Ying, Minju Beijing, CN 4 0
Zhang, Xu Beijing, CN 514 2234

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