Low defect nuclear transmutation doping in nitride-based semiconductor materials

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United States of America Patent

PATENT NO 11515161
APP PUB NO 20200365406A1
SERIAL NO

16852186

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Abstract

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Doped nitride-based semiconductor materials and methods of producing these materials are described herein.

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THE CURATORS OF THE UNIVERSITY OF MISSOURI316 UNIVERSITY HALL COLUMBIA MO 65211

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Brockman, John Columbia, US 5 49
Gahl, John Columbia, US 4 8
Kwon, Jae Wan Columbia, US 17 131

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