Nitride semiconductor laminate, method for manufacturing nitride semiconductor laminate, method for manufacturing semiconductor laminate, and method for inspecting semiconductor laminate
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United States of America Patent
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Nov 22, 2022
Grant Date -
May 16, 2019
app pub date -
Apr 3, 2017
filing date -
Jun 27, 2016
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Abstract
There is provided a nitride semiconductor laminate, including: a substrate; an electron transit layer provided on the substrate and containing a group III nitride semiconductor; and an electron supply layer provided on the electron transit layer and containing a group III nitride semiconductor, wherein a surface force A of the electron supply layer acting as an attractive force for attracting a probe and a surface of the electron supply layer when measured using the probe consisting of a glass sphere with a diameter of 1 mm covered with Cr, is stronger than a surface force B of Pt when measured under the same condition, and an absolute value |A−B| of a difference between them is 30 μN or more.
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