SiC film structure

Number of patents in Portfolio can not be more than 2000

United States of America Patent

PATENT NO 11508570
APP PUB NO 20210005491A1
SERIAL NO

16498249

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Abstract

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A SiC film structure for obtaining a three-dimensional SiC film by forming the SiC film in an outer circumference of a substrate using a vapor deposition type film formation method and removing the substrate, the SiC film structure including: a main body having a three-dimensional shape formed of a SiC film and having an opening for removing the substrate; a lid configured to cover the opening; and a SiC coat layer configured to cover at least a contact portion between the main body and an outer edge portion of the lid and join the main body and the lid.

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Patent Owner(s)

Patent OwnerAddress
ADMAP INCTAMANO-SHI OKAYAMA 706-0014

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Kawamoto, Satoshi Tamano, JP 12 55

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