Method of annealing reflective photomask by using laser
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
Nov 22, 2022
Grant Date -
Jul 22, 2021
app pub date -
Jun 25, 2020
filing date -
Jan 22, 2020
priority date (Note) -
In Force
status (Latency Note)
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Abstract
A laser annealing method performed on a reflective photomask may include preparing a reflective photomask including a pattern area and a border area surrounding the pattern area and irradiating a laser beam onto the border area of the reflective photomask. The irradiating of the laser beam may include split-irradiating a plurality of laser beam spots onto the border area. Each of the plurality of laser beam spots may be shaped using a beam shaper. The beam shaper may include a blind area, a transparent area at a center of the blind area, and a semitransparent area between the blind area and the transparent area. Each of the plurality of laser beam spots may include a center portion passing through the transparent area and having a uniform energy profile and an edge portion passing through the semitransparent area and having an inclined energy profile.
First Claim
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Family

- 15 United States
- 10 France
- 8 Japan
- 7 China
- 5 Korea
- 2 Other
Patent Owner(s)
Patent Owner | Address | |
---|---|---|
SAMSUNG ELECTRONICS CO LTD | 129 SAMSUNG-RO YEONGTONG-GU SUWON-SI GYEONGGI-DO 16677 |
International Classification(s)

- 2020 Application Filing Year
- H01L Class
- 29783 Applications Filed
- 21134 Patents Issued To-Date
- 70.96 % Issued To-Date
Inventor(s)
Inventor Name | Address | # of filed Patents | Total Citations |
---|---|---|---|
Han, Hakseung | Hwaseong-si, KR | 7 | 5 |
# of filed Patents : 7 Total Citations : 5 | |||
Park, Jongju | Hwaseong-si, KR | 15 | 40 |
# of filed Patents : 15 Total Citations : 40 | |||
Park, Sanguk | Yongin-si, KR | 21 | 26 |
# of filed Patents : 21 Total Citations : 26 | |||
Yi, Raewon | Suwon-si, KR | 5 | 4 |
# of filed Patents : 5 Total Citations : 4 |
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Patent Citation Ranking
- 2 Citation Count
- H01L Class
- 65.20 % this patent is cited more than
- 3 Age
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