Method for depositing a material film on a substrate within a reaction chamber by a cyclical deposition process and related device structures

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United States of America Patent

PATENT NO 11501973
APP PUB NO 20210066084A1
SERIAL NO

17097275

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Abstract

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A method of depositing a material film on a substrate within a reaction chamber by a cyclical deposition process is disclosed. The method may include: contacting the substrate with a first vapor phase reactant and purging the reaction chamber with a first main purge. The method also includes: contacting the substrate with a second vapor phase reactant by two or more micro pulsing processes, wherein each micro pulsing process comprises: contacting the substrate with a micro pulse of a second vapor phase reactant; and purging the reaction chamber with a micro purge, wherein each of the micro pulses of the second vapor phase reactant provides a substantially constant concentration of the second vapor phase reactant into the reaction chamber. The method may also include; purging the reaction chamber with a second main purge. Device structures including a material film deposited by the methods of the disclosure are also disclosed.

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Patent Owner(s)

  • ASM IP HOLDING B.V.

International Classification(s)

Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Chen, Peijun Chandler, US 14 666
Johnson, Ward Gilbert, US 11 2484
Li, Dong Phoenix, US 584 9113
Olstad, Mark Chandler, US 3 619
Raisanen, Petri Gilbert, US 59 17790
Romero, Jose Alexandro Albany, US 11 617

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