Memory device with predetermined start-up value
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United States of America Patent
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Nov 15, 2022
Grant Date -
Jun 25, 2020
app pub date -
Feb 28, 2020
filing date -
Aug 28, 2017
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Abstract
A method for making a semiconductor memory device comprising a plurality of memory cells for storing one or more data values, the method comprising: exposing a pattern on a wafer for creating structures for a plurality of memory cells for the semiconductor memory device, wherein the pattern is exposed by means of one or more charged particle beams; and varying an exposure dose of the one or more charged particle beams during exposure of the pattern to generate a set of one or more non-common features in one or more structures of at least one of the memory cells, so that the structures of the at least one memory cell differ from the corresponding structures of other memory cells of the semiconductor memory device.
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