Semiconductor structure having counductive bump with tapered portions and method of manufacturing the same
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United States of America Patent
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Nov 8, 2022
Grant Date -
Mar 28, 2019
app pub date -
Nov 30, 2018
filing date -
Nov 26, 2014
priority date (Note) -
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Abstract
A method for fabricating a semiconductor structure is provided. The method includes: providing a semiconductor chip comprising an active surface; forming a conductive bump over the active surface of the semiconductor chip; and coupling the conductive bump to a substrate. The conductive bump includes a plurality of bump segments including a first group of bump segments and a second group of bump segments. Each bump segment has a same segment thickness in a direction orthogonal to the active surface of the semiconductor chip, and each bump segment has a volume defined by a multiplication of the same segment thickness with an average cross-sectional area of the bump segment in a plane parallel to the active surface of the semiconductor chip. A ratio of a total volume of the first group of bump segments to a total volume of the second group of bump segments is between 0.03 and 0.8.
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