Silicon hydrazido precursor compounds

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United States of America Patent

PATENT NO 11492364
APP PUB NO 20210300952A1
SERIAL NO

16836444

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Abstract

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Provided are certain silicon precursor compounds which are useful in the formation of silicon-containing films in the manufacture of semiconductor devices, and more specifically to compositions and methods for forming such silicon-containing films, such as films comprising silicon, silicon nitride, silicon oxynitride, silicon dioxide, a carbon-doped silicon nitride, or a carbon-doped silicon oxynitride film.

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Patent Owner(s)

Patent OwnerAddress
ENTEGRIS INC129 CONCORD ROAD BILLERICA MA 01821

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Baum, Thomas H New Fairfield, US 315 10578
Khandelwal, Manish Danbury, US 36 1503

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