Mirror device structure for power MOSFET and method of manufacture

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United States of America Patent

PATENT NO 11489072
APP PUB NO 20210226054A1
SERIAL NO

17224171

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Abstract

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A MOSFET includes a substrate having a body region of a first conductivity type. A main field effect transistor (mainFET) and a mirror device are formed in the substrate. The mainFET includes first gate trenches, first source regions of a second conductivity type adjacent to the first gate trenches, and first body implant regions of the first conductivity type extending into the body region adjacent to and interposed between the first source regions. The mirror device includes second gate trenches, second source regions of the second conductivity type adjacent to the second gate trenches, second body implant regions of the first conductivity type extending into the body region adjacent to and interposed between the second source regions, and link elements of the first conductivity type interconnecting pairs of the second body implant regions.

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Patent Owner(s)

Patent OwnerAddress
NXP USA INC6501 WEST WILLIAM CANNON DRIVE AUSTIN TX 78735

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Khemka, Vishnu Chandler, US 33 237
Li, Feng Austin, US 810 5206
Qin, Ganming Chandler, US 29 126
Saxena, Tanuj Chandler, US 16 28
Zitouni, Moaniss Gilbert, US 32 167

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