Transistor structure with multiple halo implants having epitaxial layer over semiconductor-on-insulator substrate
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United States of America Patent
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Nov 1, 2022
Grant Date -
Apr 30, 2020
app pub date -
Sep 19, 2017
filing date -
Sep 24, 2013
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Abstract
A transistor structure can include a semiconductor-on-insulator substrate that includes an upper substrate region separated from a lower substrate region by a buried insulator. Shallow halo implant regions can be formed in an upper substrate region having a peak concentration at a first depth within the upper substrate region. Deep halo implant regions can be formed in the upper substrate region having a peak concentration at a second depth lower than the first depth. An epitaxial layer can be formed on top of the upper substrate region and below the control gate. Source and drain regions both of a second conductivity type formed in at least the epitaxial layer. In some embodiments, a lower substrate region can be biased for a double-gate effect.
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