Group 13 (III) nitride thick layer formed on an underlying layer having high and low carrier concentration regions with different defect densities
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United States of America Patent
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Oct 18, 2022
Grant Date -
Sep 27, 2018
app pub date -
May 29, 2018
filing date -
Dec 11, 2015
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Abstract
A crystal substrate 1 includes an underlying layer 2 and a thick film 3. The underlying layer 2 is composed of a crystal of a nitride of a group 13 element and includes a first main face 2a and a second main face 2b. The thick film 3 is composed of a crystal of a nitride of a group 13 element and provided over the first main face of the underlying layer. The underlying layer 2 includes a low carrier concentration region 5 and a high carrier concentration region 4 both extending between the first main face 2a and the second main face 2b.
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