Semiconductor structure formation
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United States of America Patent
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Oct 11, 2022
Grant Date -
May 13, 2021
app pub date -
Jan 21, 2021
filing date -
Apr 9, 2019
priority date (Note) -
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Abstract
Methods, apparatuses, and systems related to semiconductor structure formation are described. An example method includes forming an opening through silicon (Si) material, formed over a semiconductor substrate, to a first depth to form pillars of Si material. The example method further includes depositing an isolation material within the opening to fill the opening between the Si pillars. The example method further includes removing a portion of the isolation material from between the pillars to a second depth to create a second opening between the pillars and defining inner sidewalls between the pillars. The example method further includes depositing an enhancer material over a top surface of the pillars and along the inner sidewalls of the pillars down to a top portion of the isolation material.
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