Three-dimensional mask model for photolithography simulation
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United States of America Patent
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Oct 4, 2022
Grant Date -
Mar 4, 2021
app pub date -
Nov 13, 2020
filing date -
Aug 14, 2007
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Abstract
A three-dimensional mask model that provides a more realistic approximation of the three-dimensional effects of a photolithography mask with sub-wavelength features than a thin-mask model. In one embodiment, the three-dimensional mask model includes a set of filtering kernels in the spatial domain that are configured to be convolved with thin-mask transmission functions to produce a near-field image. In another embodiment, the three-dimensional mask model includes a set of correction factors in the frequency domain that are configured to be multiplied by the Fourier transform of thin-mask transmission functions to produce a near-field image.
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