Semiconductor product comprising a heteroepitaxial layer grown on a seed area of a nanostructured pedestal
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United States of America Patent
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Sep 27, 2022
Grant Date -
Jun 25, 2020
app pub date -
Jan 21, 2020
filing date -
Jul 17, 2012
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Abstract
A method for making a heteroepitaxial layer. The method comprises providing a semiconductor substrate. A seed area delineated with a selective growth mask is formed on the semiconductor substrate. The seed area comprises a first material and has a linear surface dimension of less than 100 nm. A heteroepitaxial layer is grown on the seed area, the heteroepitaxial layer comprising a second material that is different from the first material. Devices made by the method are also disclosed.
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