Method of growing semiconductor layers, method of manufacturing semiconductor device, and method of growing balk crystal

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United States of America Patent

PATENT NO 11443944
APP PUB NO 20200365402A1
SERIAL NO

16859160

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Abstract

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A method of growing semiconductor layers may include: growing a first semiconductor layer on a surface of a substrate at which a crystal layer is exposed, wherein the first semiconductor layer is different from the crystal layer in at least one of a material and a crystal structure; cutting the first semiconductor layer such that a cut surface of the first semiconductor layer extends from a front surface of the first semiconductor layer to a rear surface of the first semiconductor layer; and growing a second semiconductor layer on the cut surface of the first semiconductor layer, wherein the second semiconductor layer has a material and a crystal structure that are same as those of the first semiconductor layer.

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Patent Owner(s)

Patent OwnerAddress
DENSO CORPORATION1-1 SHOWA-CHO KARIYA-CITY AICHI 4488661 ?4488661

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Nagaoka, Tatsuji Nagakute, JP 71 1305
Nishinaka, Hiroyuki Kyoto, JP 23 14
Tahara, Daisuke Kyoto, JP 36 70
Yoshimoto, Masahiro Kyoto, JP 44 139

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