Semiconductor device
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United States of America Patent
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Sep 13, 2022
Grant Date -
Jun 25, 2020
app pub date -
Aug 30, 2019
filing date -
May 26, 2017
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Abstract
The semiconductor structure includes first and second active regions arranged in a first grid oriented in a first direction. The semiconductor structure further includes gate electrodes arranged spaced apart in a second grid and on corresponding ones of the active regions, the second grid being oriented in a second direction, the second direction being substantially perpendicular to the first direction. The first and second active regions are separated, relative to the second direction, by a gap. Each gate electrode includes a first segment and a gate extension. Each gate extension extends, relative to the second direction, beyond the corresponding active region and into the gap by a height HEXT, where HEXT≤150 nanometers (nm). Each gate extension, relative to a plane defined by the first and second directions, is substantially rectangular.
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