Split-gate MOSFET with gate shield
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United States of America Patent
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Sep 6, 2022
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N/A
app pub date -
Nov 24, 2020
filing date -
Nov 24, 2020
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Abstract
Disclosed herein are methods for forming split-gate MOSFETs including a gate shield. In some embodiments, a method may include providing a device structure including a well formed in an epitaxial layer, forming a set of trenches through the well and the epitaxial layer, implanting the device structure to form a gate shield layer at a bottom of each of the set of trenches, and forming a gate spacer layer over the device structure including within the set of trenches.
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