Self-aligned and misalignment-tolerant landing pad for magnetoresistive random access memory
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United States of America Patent
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Aug 9, 2022
Grant Date -
Aug 20, 2020
app pub date -
May 5, 2020
filing date -
Dec 28, 2017
priority date (Note) -
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Abstract
A semiconductor device and a method for fabricating the same. The semiconductor device includes a substrate and at least one trench line formed within the substrate. The semiconductor device further includes a self-aligned landing pad in contact with the at least one trench line, and a magnetic tunnel junction stack formed on and in contact with the self-aligned landing pad. The method includes forming a conductive layer on and in contact with at least one trench line formed within a substrate. Magnetic tunnel junction stack layers are deposited on and in contact with the conductive layer. The magnetic tunnel junction stack layers are etched to form a magnetic tunnel junction stack, where the etching stops on the conductive layer.
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