Method of manufacturing semiconductor device
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United States of America Patent
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Aug 9, 2022
Grant Date -
May 28, 2020
app pub date -
Jan 31, 2020
filing date -
Feb 12, 2014
priority date (Note) -
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Abstract
A method of fabricating a semiconductor device includes forming first gate structure and a second gate structure over a core device region of a substrate. The method further includes forming stressors at opposite sides of the first gate structure. The method further includes doping the stressors to form a first source region and a first drain region of a first device. The method further includes doping into the substrate and at opposite sides of the second gate structure to form a second source region and a second drain region of a second device, wherein the first source region, the first drain region, the second source region and the second drain region are of a same conductivity, and the first source region comprises a different material from the second source region.
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