Light-emitting diode and method for manufacturing thereof

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United States of America Patent

PATENT NO 11404602
APP PUB NO 20210066540A1
SERIAL NO

16927313

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Abstract

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The present application relates to the field of semiconductor, especially the Light-Emitting Diode (LED) and a manufacturing method thereof. In some examples, by etching the channel between adjacent light-emitting units, making the high reflection layer at the bottom of the channel, and producing interference fringes through the high reflection layer, and the side of the LED is exposed by using the interference fringes, thereby forming the structure of the groove and the protrusion on the side of the LED. Further, the width of the bottom of the groove can be larger than the width of the opening, and a silicon dioxide layer can be provided on the surfaces of the protrusion structures, which can further improve the luminous efficiency of the LED.

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Patent Owner(s)

Patent OwnerAddress
ANHUI SANAN OPTOELECTRONICS CO LTD241000 ANHUI CITY OF WUHU PROVINCE ECONOMIC AND TECHNOLOGICAL DEVELOPMENT ZONE DONG LIANG ROAD NO 8 WUHU CITY ANHUI PROVINCE 241000

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Bi, Dongsheng Wuhu, CN 18 116
Chang, Chia-Hao Wuhu, CN 393 1191
Huang, Chao-Ming Wuhu, CN 107 1142
Tsai, Chia-Hao Wuhu, CN 134 276
Xu, Kai Wuhu, CN 744 4482

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