Semiconductor device and manufacturing method thereof

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United States of America Patent

PATENT NO 11404377
APP PUB NO 20210280526A1
SERIAL NO

17019711

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Abstract

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A semiconductor device according to an embodiment includes: a semiconductor substrate having a diffusion region including an impurity; and a contact provided on the diffusion region. The contact includes a metal film, a barrier metal film covering the metal film, and a conductive film provided between the barrier metal film and the diffusion region and including a conductive material having a higher heat of formation than a heat of formation of the barrier metal film.

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Patent Owner(s)

Patent OwnerAddress
KIOXIA CORPORATION1-21 SHIBAURA 3-CHOME MINATO-KU TOKYO 1080023 ?1080023

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Morita, Toshiyuki Yokkaichi, JP 42 565

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