Cobalt filling of interconnects
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United States of America Patent
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Aug 2, 2022
Grant Date -
Oct 28, 2021
app pub date -
Apr 5, 2021
filing date -
Jul 5, 2017
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Abstract
Compositions and methods of using such compositions for electroplating cobalt onto semiconductor base structures comprising submicron-sized electrical interconnect features are provided herein. The interconnect features are metallized by contacting the semiconductor base structure with an electrolytic composition comprising a source of cobalt ions, a suppressor, a buffer, and one or more of a depolarizing compound and a uniformity enhancer. Electrical current is supplied to the electrolytic composition to deposit cobalt onto the base structure and fill the submicron-sized features with cobalt. The method presented herein is useful for superfilling interconnect features.
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