Method of manufacturing semiconductor device and semiconductor device

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United States of America Patent

PATENT NO 11393911
SERIAL NO

17046762

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Abstract

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A semiconductor device has: a semiconductor substrate; a drift layer of a first conductivity type; a well region of a second conductivity type; a high-concentration region of the second conductivity type, a source region of the first conductivity type; an insulating film provided on the drift layer; a first contact metal film in contact with the source region and the high-concentration region through a first opening provided in the insulating film; and a second contact metal film formed on a surface of the first contact metal film and contacting the high-concentration region through a second opening provided in the first contact metal film; a source electrode film formed on a surface of a contact metal layer including the first contact metal film and the second contact metal film. The first contact metal film includes titanium nitride, and the second contact metal film includes titanium.

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Patent Owner(s)

Patent OwnerAddress
SHINDENGEN ELECTRIC MANUFACTURING CO LTD2-1 OHTEMACHI 2-CHOME CHIYODA-KU TOKYO 1000004 ?1000004

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Inoue, Tetsuto Saitama, JP 6 33
Mochizuki, Takashi Saitama, JP 66 1440
Nakamura, Shunichi Saitama, JP 40 512
Sugai, Akihiko Saitama, JP 10 56
Takahashi, Teppei Saitama, JP 10 12

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